Arnab Biswas

Title: Arnab Biswas: Innovator in Memory Device Technology

Introduction

Arnab Biswas is a notable inventor based in Ecublens, Switzerland. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work focuses on enhancing memory technology, which is crucial for various electronic applications.

Latest Patents

Arnab Biswas holds a patent for a "Single field effect transistor capacitor-less memory device and method of operating the same." This invention includes a drain region, a source region, and an intrinsic channel region that forms the single field effect transistor. The device features a fin structure that extends outwardly from the base, along with a double gate for effective transistor control. The asymmetric design of the gates allows for improved electrostatic control, enabling efficient memory operation.

Career Highlights

Arnab is affiliated with the École Polytechnique Fédérale de Lausanne, a prestigious institution known for its cutting-edge research and innovation. His work at this institution has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Arnab has collaborated with esteemed colleagues such as Nilay Dagtekin and Mihai Adrian Ionescu. These partnerships have fostered a collaborative environment that enhances the research and development of innovative technologies.

Conclusion

Arnab Biswas is a prominent inventor whose work in memory device technology is paving the way for future advancements. His contributions are vital to the evolution of electronic memory systems, showcasing the importance of innovation in this field.