Company Filing History:
Years Active: 1982
Title: Armin W Wieder: Innovator in Transistor Technology
Introduction
Armin W Wieder is a notable inventor based in Starnberg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-performance transistor structures. His innovative work has led to advancements that benefit various electronic applications.
Latest Patents
Armin W Wieder holds a patent for a high-performance PNP and NPN transistor structure. This patent discloses the fabrication and structure of very small integrated circuit devices of both PNP and NPN types, which operate at very high speeds and low power requirements. The design features vertical NPN and lateral PNP transistors formed within the same semiconductor chip. Notably, the base width of the lateral PNP transistor is very narrow, approximately 300 to 400 nanometers. This narrow dimension is achieved by utilizing a well-defined chemically vapor deposited (CVD) oxide mask instead of conventional lithographic masking. To prevent emitter current from injecting into the substrate, the P+ emitter and P+ collector of the PNP transistor are bounded by a silicon nitride and silicon dioxide dielectric layer.
Career Highlights
Armin W Wieder is associated with International Business Machines Corporation (IBM), where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.
Collaborations
Throughout his career, Armin has collaborated with notable colleagues, including Cheng Tzong Horng and Richard R Konian. These collaborations have fostered a productive environment for innovation and development in the field of transistors.
Conclusion
Armin W Wieder's contributions to transistor technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for high-performance transistor structures showcases his commitment to advancing electronic device efficiency and performance.