Armin W Weider

Title: Armin W Weider: Innovator in Semiconductor Technology

Introduction

Armin W Weider is a notable inventor based in Starnberg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of high-performance integrated circuit devices.

Latest Patents

Weider holds a patent for a "Process for fabricating a high performance PNP and NPN structure." This patent discloses the fabrication and structure of very small integrated circuit devices of both PNP and NPN types, which are characterized by very high speeds and low power requirements. The innovative structure allows for vertical NPN and lateral PNP transistors to be formed within the same semiconductor chip. Notably, the base width of the lateral PNP transistor is very narrow, approximately 300 to 400 nanometers. This narrow dimension is achieved by utilizing a well-defined chemically vapor deposited (CVD) oxide mask instead of conventional lithographic masking. To prevent emitter current from injecting into the substrate, the P+ emitter and P+ collector of the PNP transistor are bounded by a silicon nitride and silicon dioxide dielectric layer.

Career Highlights

Armin W Weider has had a distinguished career, working at International Business Machines Corporation (IBM). His work has focused on advancing semiconductor technologies, which are crucial for modern electronic devices.

Collaborations

Weider has collaborated with notable colleagues, including Cheng Tzong Horng and Richard R Konian. Their combined expertise has contributed to the development of innovative semiconductor solutions.

Conclusion

Armin W Weider's contributions to semiconductor technology, particularly through his patented processes, highlight his role as a key innovator in the field. His work continues to influence the design and efficiency of integrated circuit devices.