Austin, TX, United States of America

Ariel Ismach

USPTO Granted Patents = 1 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Ariel Ismach: Innovator in Graphene Technology

Introduction

Ariel Ismach is a prominent inventor based in Austin, Texas. He has made significant contributions to the field of materials science, particularly in the development of graphene technologies. His innovative work has garnered attention in both academic and industrial circles.

Latest Patents

Ariel Ismach holds a patent for the "Direct chemical vapor deposition of graphene on dielectric surfaces." This patent describes a method where a substrate is provided with a metallic layer on its surface. A film made of a two-dimensional (2-D) material, such as graphene, is deposited on the metallic surface. The metallic layer can be dewet and/or removed to leave the film on the substrate surface. This innovative approach has the potential to enhance the application of graphene in various technologies.

Career Highlights

Ariel Ismach is affiliated with the University of California, where he continues to advance research in materials science. His work has not only contributed to academic knowledge but also has implications for practical applications in technology and engineering.

Collaborations

Ariel Ismach collaborates with Yuegang Zhang, a fellow researcher. Their partnership exemplifies the collaborative spirit in scientific research, leading to advancements in the field of graphene and materials science.

Conclusion

Ariel Ismach's contributions to graphene technology through his innovative patent and collaborative efforts highlight his role as a key figure in materials science. His work continues to pave the way for future advancements in this exciting field.

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