Company Filing History:
Years Active: 2023
Title: Antonio Lacerda Santos Neto: Innovator in Transistor Technology
Introduction
Antonio Lacerda Santos Neto is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in the design and production of transistors. His innovative approach has led to the development of a unique method for producing transistors that enhance their performance and reliability.
Latest Patents
Antonio holds a patent for a "Transistor having blocks of source and drain silicides near the channel." This patent describes a method for producing a transistor that includes creating a gate block on a substrate with a semiconductor surface layer. The design features lateral protection areas against the gate block's lateral faces, with source and drain regions based on a metal material-semiconductor material compound formed on either side of the gate. Insulating spacers are also incorporated to enhance the transistor's functionality. He has 1 patent to his name.
Career Highlights
Throughout his career, Antonio has worked with prominent organizations, including the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His work in these institutions has allowed him to push the boundaries of semiconductor research and development.
Collaborations
Antonio has collaborated with esteemed colleagues such as Fabrice Nemouchi and Francois Lefloch. Their combined expertise has contributed to advancements in the field of transistor technology.
Conclusion
Antonio Lacerda Santos Neto is a distinguished inventor whose work in transistor technology has made a lasting impact. His innovative methods and collaborations continue to influence the semiconductor industry.