Lynn, MA, United States of America

Anthony B Varallo


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1986

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2 patents (USPTO):Explore Patents

Title: Innovations of Anthony B Varallo

Introduction

Anthony B Varallo is a notable inventor based in Lynn, MA (US). He has made significant contributions to the field of electrical engineering, particularly in the development of high voltage and high frequency amplifier circuits. With a total of two patents to his name, Varallo's work showcases his expertise and innovative spirit.

Latest Patents

Varallo's latest patents include a high voltage, high frequency amplifier circuit and a high voltage, high frequency amplifier employing power transistors. The first patent describes an amplifier that provides parallel AC signal amplification paths through each transistor while maintaining a single DC power path through the transistors in series. In this design, two FETs have their gate electrodes connected to an input terminal and their drain electrodes connected to an output terminal, allowing for two parallel AC amplifying paths while blocking DC current flow. The drain electrode of the first FET is connected through an RF choke to a source of DC operating potential, and its source electrode is connected through an RF choke to the drain electrode of the second FET. The source electrode of the second FET is connected to ground through a zener diode, creating a single DC conductive path between the source of operating potential and ground through the two FETs in series.

The second patent also focuses on a high frequency amplifier that employs power transistors. Similar to the first, this amplifier provides parallel AC signal amplification paths through each transistor and a single DC power path through the transistors in series. In this embodiment, the source electrodes of the two FETs are connected to an input terminal, while their drain electrodes are connected to an output terminal. The drain electrode of the first FET is connected through an RF choke to a source of DC operating potential, and its source electrode is connected through an RF choke to the drain electrode of the second FET. The gate electrode of the second FET is connected to ground, ensuring a single DC conductive path between the source of operating potential and ground through the two FETs in series.

Career Highlights

Anthony B Varallo is currently associated with GTE Laboratories Incorporated, where he continues to innovate and develop advanced technologies. His work has had a significant impact on the field of electronics, particularly in amplifier design.

Collaborations

Varallo has collaborated with notable colleagues such as Scott J Butler and Robert J Regan, contributing to various

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