Saratoga Springs, NY, United States of America

Annie Lévesque

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2017)
  • Saratoga Springs, NY (US) (2019)

Company Filing History:


Years Active: 2017-2019

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: **Innovative Contributions of Annie Lévesque in Semiconductor Technology**

Introduction

Annie Lévesque, an accomplished inventor based in Saratoga Springs, NY, has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance and efficiency of semiconductor structures, she holds two patents that reflect her innovative approach to solving complex engineering challenges.

Latest Patents

Annie's latest patents showcase her expertise in developing advanced methods and systems for fabricating semiconductor devices. One of her notable inventions is titled "Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide." This patent involves creating increased surface regions within epitaxial (EPI) structures, which enhances the efficacy of the semiconductor devices. Another significant invention is related to "Field-effect transistors with source/drain regions of reduced topography." This patent outlines device structures and fabrication methods for fin-type field-effect transistors, focusing on optimizing the source/drain regions through innovative semiconductor growth processes.

Career Highlights

Annie Lévesque works at GlobalFoundries Inc., a leader in semiconductor manufacturing. Her work there has positioned her at the forefront of technological advancements in the industry. Annie's patents have not only contributed to the company's research and development efforts but also enhanced the overall capabilities of semiconductor technology.

Collaborations

Throughout her career, Annie has collaborated with talented individuals, including her coworkers Matthew W. Stoker and Judson Robert Holt. These collaborations have fostered a dynamic environment for innovation, allowing for the exchange of ideas and the development of groundbreaking solutions in semiconductor technologies.

Conclusion

Annie Lévesque exemplifies the spirit of innovation in the semiconductor industry. Her patents are a testament to her dedication and ingenuity, paving the way for advancements that continue to shape the future of technology. As she continues her work at GlobalFoundries Inc., Annie remains an influential figure driving forward the boundaries of semiconductor research and development.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…