Company Filing History:
Years Active: 2023
Title: Inventor Spotlight: Anna-Lisa Serra from Grenoble, France
Introduction
Anna-Lisa Serra is an innovative inventor based in Grenoble, France, known for her groundbreaking contributions to the field of memory technology. With a strong commitment to advancing electronic memory solutions, she holds a patent for a significant method in programming phase change memory.
Latest Patents
Anna-Lisa's patent, titled "Method for Programming a Phase Change Memory," includes a first layer of a phase change material capable of switching between a crystalline and an amorphous state. This method involves applying a programming current through this layer, ensuring that the evolution of the areal density of the current as a function of time decreases from a first level to a second level, following a precise time-dependent evolution characterized by a constant K. This innovative approach enhances the efficiency and reliability of phase change memory technology.
Career Highlights
Anna-Lisa Serra is currently associated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, where she applies her expertise in electronic memory systems. Her work in the field has positioned her as a key player in memory technology research and development, with a focus on improving data storage solutions.
Collaborations
Throughout her career, Anna-Lisa has collaborated with notable colleagues such as Gabriele Navarro and Guillaume Bourgeois. These partnerships have allowed her to leverage diverse expertise and drive forward innovative projects within her research institution.
Conclusion
Anna-Lisa Serra is a prominent inventor whose work on programming phase change memory stands as a testament to her dedication and intellect in the field. Her contributions continue to pave the way for advancements in memory technology, and her collaborative spirit enhances innovation within her workplace. As the field evolves, Anna-Lisa's pioneering efforts will likely inspire future inventions and progress in electronic memory systems.