Anging Zhang

Title: **Innovator Spotlight: Anging Zhang**

Introduction

A distinguished inventor based in Cupertino, CA, Anging Zhang has made significant contributions to the field of photoresist technology. With one patent to his name, his work has implications for various applications in semiconductor manufacturing and nanofabrication.

Latest Patents

Aging Zhang's most notable patent is related to a dual-layer deep ultraviolet photoresist process and structure. This innovative method addresses swelling defects commonly found in photoresist structures. The process involves disposing a layer of low activation energy deep ultraviolet photoresist over a pattern layer, followed by a layer of high activation energy photoresist. The resulting dual-layer system is processed through exposure, post-exposure bake, and development steps, leading to a patterned layer that maintains structural integrity without swelling defects.

Career Highlights

Employed at Integrated Device Technology, Inc., Anging Zhang's technical expertise has fostered advancements in semiconductor processing techniques. His dedication to innovation has made him a valuable asset in the ever-evolving technology landscape.

Collaborations

Throughout his career, Anging has had the pleasure of working alongside talented colleagues such as Yiming Gu and John L Sturtevant. These collaborations have undoubtedly enhanced his research efforts and contributed to the successful development of his patent.

Conclusion

Aging Zhang’s innovative approach to photoresist technology reflects the spirit of advancement in the fields of electronics and materials science. His work not only brings forth practical solutions to existing challenges but also sets the stage for future innovations in semiconductor manufacturing.