Company Filing History:
Years Active: 2022-2024
Title: Andris Ezis: Innovator in High-Speed Semiconductor Technology
Introduction
Andris Ezis is an accomplished inventor based in Ellicott City, MD. He has made significant contributions to the field of semiconductor technology through his innovative inventions. With a total of two patents to his name, his work has focused on enhancing the performance and integration of critical components within electronic circuits.
Latest Patents
Andris Ezis holds two patents, with his latest inventions centered on methods for integrating phase change switches into high-speed semiconductor processes. His notable patent details a method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS. This method involves providing a base structure consisting of BiCMOS circuitry on a semiconductor substrate. The process includes forming a dielectric contact window layer with metal through-plugs that interface with the BiCMOS circuitry. The construction of the phase change switch (PCS) is performed on this contact window layer, which features a phase change region operating as a switch controlled by heat. The innovative design includes a stack of alternating patterned metal layers and dielectric layers that seamlessly connect the ohmic contacts to the BiCMOS circuitry and the resistive heater.
Career Highlights
Andris Ezis currently works at Northrop Grumman Systems Corporation, where he has been able to leverage his expertise in semiconductor technology. His work has placed him at the forefront of research and development in high-speed electronics, contributing to advancements that will impact various applications in the field.
Collaborations
Throughout his career, Andris Ezis has collaborated with talented individuals such as Keith H Chung and Ishan Wathuthanthri. These collaborative efforts have fostered innovation and allowed for the exchange of ideas that enhance the capabilities of the technologies being developed.
Conclusion
Andris Ezis is a noteworthy figure in the realm of semiconductor technology, continually pushing the boundaries of innovation with his patents and contributions at Northrop Grumman Systems Corporation. His work, particularly in high-speed SiGe BiCMOS processes, signifies a vital advancement in electronic circuit design, promising enhanced performance and efficiency in future electronic devices.