Troy, NY, United States of America

Andrew N Dasheff


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1989

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Andrew N Dasheff

Introduction

Andrew N Dasheff is a notable inventor based in Troy, NY (US). He has made significant contributions to the field of semiconductor technology through his innovative patents. With a total of 2 patents, Dasheff's work focuses on advanced materials that enhance the functionality of semiconductor devices.

Latest Patents

Dasheff's latest patents include the development of an electron-beam positive polyimide. This material is characterized by its ability to be exposed by an electron beam, rendering the exposed areas soluble. The resulting pattern can be utilized directly as an insulator layer in semiconductor devices. Another significant patent is for a positive-working photosensitive polyimide, which can be exposed to a pattern of light to achieve similar solubility effects. The preparation process for this photosensitive soluble polyimide involves the use of maleic anhydride, which is irradiated by ultraviolet light to form a cyclobutane unit. This unit is then reacted with oxydianiline to create polymic acid, which is cured using heat into the final product.

Career Highlights

Throughout his career, Dasheff has worked with prestigious organizations such as Rensselaer Polytechnic Institute and IBM. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking research in semiconductor materials.

Collaborations

Dasheff has collaborated with notable colleagues, including James A Moore and Frank Benjamin Kaufman. These partnerships have further enriched his work and expanded the impact of his inventions.

Conclusion

Andrew N Dasheff's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of new materials that enhance device performance.

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