Location History:
- Munich, DE (1996 - 1998)
- Wappingers Fall, NY (US) (1999)
Company Filing History:
Years Active: 1996-1999
Title: Innovations of Andreas Vom Felde
Introduction
Andreas Vom Felde is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor components.
Latest Patents
One of his latest patents is a method of manufacturing semiconductor components. This method reduces capacitances occurring between contacts, interconnects, or metallizations by filling cavities with air or gas. These cavities are produced between the semiconductor material and a passivation layer in regions where the interconnects are surrounded by dielectric, and they are subsequently closed by a further passivation layer. Another significant patent is for an MOS transistor designed for biotechnical applications. This MOS transistor features a gate electrode that is electrically conductively connected to an exposed contact area (pad). The contact area is electrochemically corrosion-resistant and is dimensioned for connection to a living cell. The surface topology is relatively flat, and, with the exception of the contact area, the surface is protected with a dielectric passivation layer.
Career Highlights
Andreas Vom Felde is currently employed at Siemens Aktiengesellschaft, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing technologies that bridge the gap between electronics and biotechnology.
Collaborations
He has collaborated with notable colleagues such as Martin Kerber and Emmerich Bertagnolli, contributing to a dynamic and innovative work environment.
Conclusion
Andreas Vom Felde's contributions to semiconductor technology exemplify the impact of innovation in modern electronics. His patents reflect a commitment to improving the functionality and application of semiconductor components.