Munich, Germany

Andreas Bänisch

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Munich, DE (2005)
  • München, DE (2005)

Company Filing History:


Years Active: 2005-2025

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3 patents (USPTO):Explore Patents

Title: The Innovations of Andreas Bänisch

Introduction

Andreas Bänisch is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of electronic devices.

Latest Patents

One of his latest patents is the "MOSFET-based RF switch with charge reduction." This innovative RF switch device includes transistors coupled in series to form a current path, a drain-source resistive bias network, and a discharge switch that establishes a current path during a switching transient. Another significant patent is the "Semiconductor fuse device," which allows for an increased number of fuses per area while maintaining the required distance between them. This device features a patterned conductive interconnect plane and a fuse device divided into modules, enhancing the linking of interconnects.

Career Highlights

Andreas Bänisch is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has positioned him as a key player in the development of advanced electronic components.

Collaborations

He collaborates with talented individuals such as Franz-Xaver Obergrussberger and Valentyn Solomko, contributing to innovative projects and advancements in technology.

Conclusion

Andreas Bänisch's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for future innovations in electronic devices.

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