Company Filing History:
Years Active: 2010
Title: Amane Inoue: Innovator in Ferroelectric Memory Technology
Introduction
Amane Inoue is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of memory technology, particularly in the development of ferroelectric memory systems. His innovative approach has led to advancements that enhance the reliability and performance of nonvolatile memory units.
Latest Patents
Inoue holds a patent for a ferroelectric memory and its operating method. This invention focuses on a nonvolatile decision memory unit that stores decision data indicating whether the data in normal memory cells is true or false. The invention includes an inversion control circuit that sets the inverting signal to a valid level with a predetermined probability. A write circuit is designed to write data with logic that is the inverse of the data to be rewritten in the normal memory cells. Additionally, it writes decision data indicating false to the decision memory unit when the inverting signal indicates a valid level. This method prevents imprinting during repetitive read operations and minimizes deterioration of the ferroelectric capacitor due to reverse polarization. As a result, the reliability of the ferroelectric memory is significantly improved.
Career Highlights
Amane Inoue is currently employed at Fujitsu Microelectronics Limited, where he continues to work on innovative memory technologies. His expertise in ferroelectric memory systems has positioned him as a key figure in the advancement of nonvolatile memory solutions.
Collaborations
Inoue has collaborated with notable colleagues such as Shingo Hagiwara and Yoshiaki Kaneko. Their combined efforts have contributed to the development of cutting-edge technologies in the field of memory systems.
Conclusion
Amane Inoue's contributions to ferroelectric memory technology exemplify the impact of innovative thinking in the field of electronics. His work not only enhances the reliability of memory systems but also paves the way for future advancements in nonvolatile memory technology.
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