Company Filing History:
Years Active: 2001-2003
Title: The Innovative Contributions of Allen U Huang in NAND Flash Memory Technology
Introduction
Allen U Huang is a prominent inventor located in San Jose, California, who has made significant contributions to the field of NAND flash memory technology. With three patents to his name, Huang's work focuses on methods that enhance the functionality and performance of NAND type flash memory devices. His innovations demonstrate a commitment to advancing technology and improving the efficiency of memory storage solutions.
Latest Patents
Huang's latest patents include groundbreaking methods aimed at reducing program disturbances and improving read disturb issues in NAND flash memory devices.
One of his innovations is the "Method of reducing program disturbs in NAND type flash memory devices." This invention leverages ion bombardment to create amorphous source and drain regions in short-channel field-effect transistors (FETs) before implantation. The localized implants at a shallow depth—achieved using lower bombardment voltages around 10 KeV—significantly reduce the risk of punchthrough and prevent loss of FET function.
Another significant patent is the "Process to improve read disturb for NAND flash memory devices." This method involves a series of steps to ensure that NAND flash memory devices can endure more than 1 × 10 program/erase cycles without encountering significant read disturb problems. The process includes growing and annealing oxide layers and depositing layers of in situ doped amorphous silicon, ultimately contributing to a robust flash memory cell design.
Career Highlights
Allen U Huang is currently associated with Advanced Micro Devices Corporation, where he applies his expertise to further advancements in semiconductor technology. His inventions are integral to enhancing the reliability and capability of NAND flash memories, which are widely used in various electronic devices.
Collaborations
Throughout his career, Huang has worked alongside accomplished colleagues such as Yue-Song He and Kent Kuohua Chang. Collaborating with other experts in the industry has undoubtedly fueled his innovative spirit and contributed to the successful development of his patented methods.
Conclusion
In conclusion, Allen U Huang stands out as a remarkable inventor whose work has significantly advanced NAND flash memory technology. His patents reflect a deep understanding of semiconductor devices and their complexities. As technology continues to evolve, Huang's contributions will likely have a lasting impact on the future of memory storage solutions.