Levittown, NY, United States of America

Ali Salih


Average Co-Inventor Count = 1.4

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1992-1994

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ali Salih

Introduction

Ali Salih is a notable inventor based in Levittown, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced methods for fabricating multilayer epitaxial structures and controlling the switching speed of bipolar power devices.

Latest Patents

One of Ali Salih's latest patents is a method for fabricating a multilayer epitaxial structure. This innovative process employs an all epitaxial method performed entirely in a CVD reactor. It allows for the growth of heavily doped layers on lightly doped layers on a heavily doped substrate, eliminating the need for separate diffusion, even for high impurity concentrations. The process begins with a heavily doped silicon substrate, typically having a carrier concentration greater than 1.times.10.sup.19 per cm.sup.3. To minimize outdiffusion, the substrate is capped by growing very thin and heavily doped silicon layers, which are depleted by hydrogen purges. A first epitaxial layer is then grown over the capped substrate, which is relatively lightly doped, having a resistivity of more than 200 ohm.cm. Following this, a second epitaxial layer is grown over the first, possessing a polarity opposite to that of the substrate and heavily doped to a resistivity of less than 0.005 ohm cm.

Another significant patent by Salih is a method for controlling the switching speed of bipolar power devices. This innovation increases the switching speed of bipolar power rectifiers by forming misfit dislocations in the depletion region, spaced from the substrate/epitaxial layer interface. This formation reduces minority carrier lifetime. The misfit dislocations are created by introducing germanium during epitaxy, distributed along the silicon/silicon-germanium interface. Preferably, the germanium-containing layer is located proximate the center of the depletion region.

Career Highlights

Throughout his career, Ali Salih has worked with various companies, including General Instrument Corporation. His expertise in semiconductor technology has made him a valuable asset in the industry.

Collaborations

Salih has collaborated with notable coworkers such as Reinhold Hirtz and Gregory Zakaluk. Their combined efforts have contributed to advancements in semiconductor technology.

Conclusion

Ali

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