Alfred Hausler

Title: Alfred Hausler: Innovator in Integrated Circuit Technology

Introduction

Alfred Hausler is a notable inventor based in Freising, Germany. He has made significant contributions to the field of integrated circuits, particularly in the control of dopant diffusion in bipolar integrated circuits. His innovative work has led to advancements that enhance the performance and reliability of electronic devices.

Latest Patents

Alfred Hausler holds a patent for the "Control of dopant diffusion from buried layers in bipolar integrated circuits." This patent describes an integrated circuit and a method for fabricating it. The integrated circuit features vertical bipolar transistors, each equipped with a buried collector region. A carbon-bearing diffusion barrier is strategically placed over the buried collector region to inhibit the diffusion of dopants into the overlying epitaxial layer. This innovative approach can be achieved by incorporating a carbon source during the epitaxial formation or through ion implantation techniques.

Career Highlights

Alfred Hausler is associated with Texas Instruments Corporation, a leading company in the field of electronics and semiconductor technology. His work at Texas Instruments has allowed him to contribute to cutting-edge advancements in integrated circuit design and fabrication.

Collaborations

Throughout his career, Alfred has collaborated with notable colleagues, including Jeffrey A. Babcock and Angelo Pinto. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies in the semiconductor industry.

Conclusion

Alfred Hausler's contributions to integrated circuit technology exemplify the spirit of innovation in the electronics field. His patent on controlling dopant diffusion showcases his expertise and commitment to advancing technology. His work continues to influence the development of reliable and efficient electronic devices.