Company Filing History:
Years Active: 2009
Title: Alexei Heiman: Innovator in X-ray Imaging and VLSI Technology
Introduction
Alexei Heiman is a notable inventor based in Migdal Haemek, Israel. He has made significant contributions to the fields of X-ray imaging and very-large-scale integration (VLSI) technology. With a total of 2 patents to his name, Heiman continues to push the boundaries of innovation in his field.
Latest Patents
One of Heiman's latest patents is for a high-resolution integrated X-ray CMOS image sensor. This innovative sensor incorporates scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). The design allows for the formation of deep pores in the back side of the CIS wafer, which are aligned with corresponding photodiodes. This configuration enhances the efficiency of the resulting waveguide structures. Another significant patent involves a self-aligned LDMOS fabrication method integrated with a deep-sub-micron VLSI process. This method allows for the concurrent formation of LDMOS devices and low-power CMOS devices on a substrate, utilizing a two-mask etching process to define the gate structure.
Career Highlights
Heiman is currently employed at Tower Semiconductor Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits and imaging technologies.
Collaborations
Heiman collaborates with talented coworkers, including Sharon Levin and Ira Naot, who contribute to the innovative environment at Tower Semiconductor Ltd.
Conclusion
Alexei Heiman's contributions to X-ray imaging and VLSI technology exemplify his commitment to innovation. His patents reflect a deep understanding of semiconductor processes and a drive to enhance imaging capabilities.