Marlboro, MA, United States of America

Alan W Swanson


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Alan W. Swanson

Introduction: Alan W. Swanson is a notable inventor based in Marlboro, MA, whose work has significantly contributed to the field of semiconductor technology. With a focus on gallium arsenide circuits, Swanson's inventive efforts have paved the way for advancements in electronic devices.

Latest Patents: Swanson holds a patent for his groundbreaking method titled "Selective epitaxial etch planar processing for gallium arsenide." This innovative approach involves fabricating gallium arsenide circuits by depositing source and drain contact areas using vapor phase epitaxy techniques through openings in a refractory mask. The process begins by etching selected areas of the refractory mask to reveal active gallium arsenide material, then forming holes through chemical or plasma etching. These holes are subsequently filled with highly doped vapor phase epitaxially grown gallium arsenide, establishing the drain and source contact regions. Further etching defines gate regions, allowing for efficient metallization and lift-off, culminating in a planar surface for additional device processing.

Career Highlights: Alan W. Swanson’s innovative contributions have been recognized in the field of electronics, particularly through his association with Sperry Corporation. His work exemplifies the intersection of ingenuity and practical application, reinforcing the importance of streamlined fabrication methods in semiconductor technology.

Collaborations: Throughout his career, Swanson has collaborated with esteemed colleagues, including Charles R. Snider and Frank H. Spooner. Their combined expertise has undoubtedly drawn upon diverse insights, enriching the innovative endeavors at Sperry Corporation.

Conclusion: Alan W. Swanson stands out as a remarkable inventor whose patent on selective epitaxial etch planar processing has made significant strides in the manufacturing of gallium arsenide circuits. His collaborations and commitment to innovation continue to impact the landscape of semiconductor technology, ensuring a legacy of advancements in electronic devices.

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