Alan C Gallagher

Title: Alan C Gallagher: Innovator in Hydrogenated Amorphous Silicon Technology

Introduction

Alan C Gallagher is a notable inventor based in Louisville, Colorado, recognized for his contributions to the field of hydrogenated amorphous silicon technology. With a total of 7 patents to his name, Gallagher has made significant advancements in methods for fabricating device-quality thin-film materials used in photovoltaic and other electronic devices.

Latest Patents

Gallagher's latest patents include innovative methods for the deposition of device-quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates. One of his key inventions involves a method of fabricating thin-film a-Si:H, which includes positioning a substrate in a vacuum chamber adjacent to heatable filaments. This process ensures the complete decomposition of silicohydride molecules into silicon and hydrogen atomic species, allowing for the growth of a-Si:H films at rates of at least 50 Å/sec. Another patent details a method for producing hydrogenated amorphous silicon on a substrate, which involves maintaining specific pressure and temperature conditions to optimize the deposition process.

Career Highlights

Throughout his career, Gallagher has worked with esteemed organizations, including the Government of the United States of America, as represented by the Secretary of Commerce, and the Midwest Research Institute. His work has significantly impacted the development of semiconductor materials, particularly in the renewable energy sector.

Collaborations

Gallagher has collaborated with notable colleagues such as Archie Harvin Mahan and Edith C Molenbroek, contributing to various research projects and advancements in technology.

Conclusion

Alan C Gallagher's innovative work in hydrogenated amorphous silicon technology has established him as a key figure in the field. His patents and career achievements reflect his dedication to advancing semiconductor materials for various applications.