Alain Humbert

Title: The Innovative Contributions of Alain Humbert

Introduction

Alain Humbert is a notable inventor based in Plessis Trevise, France. He has made significant contributions to the field of material science, particularly in the area of epitaxial growth techniques. His work has implications for various applications in electronics and materials engineering.

Latest Patents

Humbert holds a patent for a method of growing by epitaxy from the vapor phase a material on a substrate. This innovative method involves epitaxially growing a monocrystalline layer on an oxidizable substrate. The process includes growing an epitaxial layer of the oxidizable material on a support of a monocrystalline material, followed by the removal of the support material to allow for etching. The exposed layer is then placed in a non-oxidizing atmosphere for further processing, leading to the growth of a monocrystalline layer of another material.

Career Highlights

Alain Humbert has been associated with U.S. Philips Corporation, where he has contributed to various research and development projects. His expertise in epitaxial growth has positioned him as a valuable asset in the field of advanced materials.

Collaborations

Humbert has collaborated with notable colleagues such as Jean Philippe Hallais and Claude Schemali. These partnerships have fostered innovation and have led to advancements in their respective fields.

Conclusion

Alain Humbert's contributions to the field of epitaxial growth and material science are noteworthy. His patent and collaborative efforts reflect his commitment to innovation and excellence in research.