Cupertino, CA, United States of America

Abhijit Bandyopadhyay


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Abhijit Bandyopadhyay: Innovator in Semiconductor Technology

Introduction

Abhijit Bandyopadhyay is a notable inventor based in Cupertino, California. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

His most recent patent is titled "High speed, low cost BICMOS process using profile engineering." This invention involves a bipolar complementary metal oxide semiconductor device that utilizes profile engineering. The process includes a c-well fabricated using multi-energy implant techniques, which allows for a higher c-well implant dose while maintaining a narrow region with relatively low concentration in the collector depletion range. This design effectively reduces collector series resistance, enhancing frequency response and enabling a collector sheet resistance as low as 150 Ω/sq. Furthermore, it allows for frequency increases up to 20 GHz or higher.

Career Highlights

Abhijit Bandyopadhyay is currently associated with the Institute of Microelectronics. His work has been pivotal in advancing semiconductor processes, making them more efficient and cost-effective.

Collaborations

He has collaborated with notable colleagues, including Minghui Gao and Haijun Zhao, contributing to various projects within the semiconductor field.

Conclusion

Abhijit Bandyopadhyay's innovative work in semiconductor technology exemplifies the impact of engineering advancements on modern electronics. His contributions continue to shape the future of high-speed electronic devices.

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