Company Filing History:
1 out of 15,458 
1 out of 408 Years Active: 2025
Title: Abdullah Ibrahim Alhassan: Innovator in III-Nitride Semiconductor Technology
Introduction
Abdullah Ibrahim Alhassan is a prominent inventor based in Riyadh, Saudi Arabia. He has made significant contributions to the field of semiconductor technology, particularly in the development of III-nitride devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this specialized area.
Latest Patents
Alhassan holds a patent for a method titled "Metal organic chemical vapor deposition (MOCVD) tunnel junction growth in III-nitride devices." This patent describes a process for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device. The method involves performing a growth of III-nitride or (Al,Ga,In,B)N material that includes a p-n junction with an active region. It utilizes metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition techniques. Additionally, the process includes a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material, employing a pulsed delta n-type doping scheme to achieve an abrupt and smoother surface of the n-type material, along with a higher carrier concentration.
Career Highlights
Throughout his career, Abdullah Ibrahim Alhassan has worked with esteemed institutions such as the University of California and King Abdulaziz City for Science and Technology. His experience in these organizations has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in semiconductor technology.
Collaborations
Alhassan has had the opportunity to work alongside notable colleagues, including Ahmed Alyamani and Abdulrahman Albadri. These collaborations have further enriched his research and development efforts in the semiconductor domain.
Conclusion
Abdullah Ibrahim Alhassan is a distinguished inventor whose work in III-nitride semiconductor technology has made a lasting impact. His innovative patent reflects his dedication to advancing the field and showcases his expertise in semiconductor fabrication methods.
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