Goleta, CA, United States of America

Abdullah Ibrahim Alhassan


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

Loading Chart...
1 patent (USPTO):

Title: **Abdullah Ibrahim Alhassan: Innovator in III-Nitride Semiconductor Devices**

Introduction

Abdullah Ibrahim Alhassan is an esteemed inventor based in Goleta, California. He holds a patent that significantly advances the field of semiconductor technology, particularly focusing on III-nitride devices. His innovative methodologies and contributions have made a lasting impact on the development of semiconductor materials and their applications.

Latest Patents

Alhassan's notable patent is centered around the technique of Metal Organic Chemical Vapor Deposition (MOCVD) tunnel junction growth in III-nitride devices. This patent involves a detailed method for fabricating a semiconductor device comprising (Al,Ga,In,B)N or III-nitride, which includes the growth of III-nitride materials featuring a p-n junction with an active region. His approach incorporates a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material, utilizing MOCVD while implementing a pulsed delta n-type doping scheme. This innovation leads to a smoother surface of n-type material and a higher carrier concentration, crucial for enhancing device performance.

Career Highlights

Throughout his career, Abdullah has contributed his expertise to prominent institutions, including the University of California and King Abdulaziz City for Science and Technology. His experience and research in the semiconductor field have positioned him as a leading figure in the development of new technologies.

Collaborations

Alhassan has collaborated with other notable researchers in the field, including James Stephen Speck and Steven P DenBaars. These collaborations have allowed for shared knowledge and advancements in semiconductor technologies, fostering a productive research environment.

Conclusion

Abdullah Ibrahim Alhassan's contributions to the field of III-nitride semiconductor devices, through his innovative patent in MOCVD techniques, exemplify the vital role of inventors in driving technological progress. His career highlights and collaborations mark him as an influential figure in the realm of semiconductor research and development.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…