The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1976
Filed:
Jan. 06, 1976
Applicant:
Inventors:
Narasipur G Anantha, Hopewell Junction, NY (US);
Robert C Dockerty, Highland, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 13 ; 357 23 ; 357 52 ; 357 53 ; 357 59 ; 307238 ;
Abstract
A Schottky barrier diode having an encircling floating polycrystalline silicon gate which becomes charged upon avalanche breakdown of the diode. The gate is self-aligned with respect to the Schottky barrier diode metal so that the gate uniformly overhangs the depletion area in the semiconductor when the diode is reverse biased. The gate is insulated from the semiconductor material and from the metal by dielectric layers including silicon dioxide and silicon nitride.