The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Dec. 02, 2021
Tessera Advanced Technologies, Inc., San Jose, CA (US);
Ryoung-Han Kim, Clifton Park, NY (US);
Tessera Advanced Technologies, Inc., San Jose, CA (US);
Abstract
A multilayer interconnect structure is formed by, providing a substrate having thereon a first dielectric for supporting a multi-layer interconnection having lower conductor M, upper conductor M, dielectric interlayer (DIL) and interconnecting via conductor V. The lower conductor Mhas a first upper surface located in a recess below a second upper surface of the first dielectric. The DIL is formed above the first and second surfaces. A cavity is etched through the DIL from a desired location of the upper conductor M, exposing the first surface. The cavity is filled with a further electrical conductor to form the upper conductor Mand the connecting via conductor Vmaking electrical contact with the first upper surface. A critical dimension between others of lower conductors Mand the via conductor Vis lengthened. Leakage current and electro-migration therebetween are reduced.