The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Aug. 22, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Shih-Hung Chen, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H01L 2924/0002 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02);
Abstract

A 3D semiconductor device is provided, comprising plural memory layers vertically stacked on a substrate and parallel to each other; plural selection lines disposed on the memory layers and parallel to each other; plural bit lines disposed on the selection lines, and the bit lines arranged in parallel to each other and in perpendicular to the selection lines; plural strings formed vertically to the memory layers and the selection lines, and the strings electrically connected to the corresponding selection lines; a plurality of cells respectively defined by the strings, the selection lines and the bit lines correspondingly, and the cells arranged in a plurality of rows and columns, wherein a column direction is parallel to the bit lines while a row direction is parallel to the selection lines. The adjacent cells in the same column are electrically connected to the different bit lines.


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