The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Mar. 31, 2022
Applicant:

Tessera Llc, San Jose, CA (US);

Inventors:

Bruce B. Doris, Slingerlands, NY (US);

Hong He, Schenectady, NY (US);

Sivananda K. Kanakasabapathy, Niskayuna, NY (US);

Gauri Karve, Cohoes, NY (US);

Fee Li Lie, Albany, NY (US);

Derrick Liu, Albany, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Stuart A. Sieg, Albany, NY (US);

Assignee:

Tessera LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.


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