The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2019
Filed:
Mar. 09, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Ramkumar Subramanian, Fremont, CA (US);
Anne Le Gouil, Fremont, CA (US);
Yoko Yamaguchi, Union City, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2005.12); H01L 21/3213 (2005.12); H01L 21/308 (2005.12); C23F 4/00 (2005.12);
U.S. Cl.
CPC ...
H01L 21/32136 (2012.12); C23F 4/00 (2012.12); H01L 21/3086 (2012.12); H01L 21/30655 (2012.12);
Abstract
A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.