The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2013
Filed:
May. 26, 2011
Applicants:
Gwo-yuh Shiau, Hsin-Chu, TW;
Ming Chyi Liu, Hsin-Chu, TW;
Tzu-hsuan Hsu, Kaohsiung, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Inventors:
Gwo-Yuh Shiau, Hsin-Chu, TW;
Ming Chyi Liu, Hsin-Chu, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2005.12);
U.S. Cl.
CPC ...
Abstract
The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.