The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2008
Filed:
May. 26, 2005
Applicants:
Yuji Hori, Nagoya, JP;
Tomohiko Shibata, Kasugai, JP;
Mitsuhiro Tanaka, Handa, JP;
Osamu Oda, Nishikasugai-Gun, JP;
Inventors:
Yuji Hori, Nagoya, JP;
Tomohiko Shibata, Kasugai, JP;
Mitsuhiro Tanaka, Handa, JP;
Osamu Oda, Nishikasugai-Gun, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2005.12); H01L 21/00 (2005.12);
U.S. Cl.
CPC ...
Abstract
In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.