The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2007
Filed:
Jun. 28, 2001
Paul Wickboldt, Walnut Creek, CA (US);
Paul G. Carey, Mountain View, CA (US);
Patrick M. Smith, San Jose, CA (US);
Albert R. Ellingboe, Malahide, IE;
Paul Wickboldt, Walnut Creek, CA (US);
Paul G. Carey, Mountain View, CA (US);
Patrick M. Smith, San Jose, CA (US);
Albert R. Ellingboe, Malahide, IE;
The Regents of the University of California, Oakland, CA (US);
Abstract
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.