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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9997627 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

Sep. 19, 2017

Vertical channel oxide semiconductor field effect transistor and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wanxun He, Singapore, SG;

Su Xing, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 21/467 (2006.01); H01L 21/441 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/441 (2013.01); H01L 21/467 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/24 (2013.01); H01L 29/42364 (2013.01); H01L 29/66969 (2013.01);
Abstract

A semiconductor device includes: a channel layer surrounded by a source layer; a first dielectric layer around the source layer; a gate layer around the channel layer and on the source layer; a first oxide semiconductor layer between the gate layer and the channel layer; a second oxide semiconductor layer between the gate layer and the drain layer; a second gate dielectric layer between the second oxide semiconductor layer and the drain layer; a drain layer on the gate layer and around the channel layer; and a second dielectric layer around the drain layer.

Find Patent Forward Citations

He, Wanxun. (2018). Vertical channel oxide semiconductor field effect transistor and method for fabricating the same (U.S. Patent No. 9997627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9997627

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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