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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9997603 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

Aug. 25, 2017

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Yasuyuki Hoshi, Matsumoto, JP;

Yuichi Harada, Matsumoto, JP;

Takashi Shiigi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01);
Abstract

In a semiconductor device, an interlayer insulating film electrically insulating a gate electrode and a source electrode has a structure in which a BPSG film and a NSG film are sequentially stacked. Further, the interlayer insulating film has a structure in which the BPSG film, the NSG film, and a SiN film are sequentially stacked, or a structure in which the BPSG film, the SiN film, and the NSG film are sequentially stacked. Such a structure enables the reliability of the semiconductor device in which a pin-shaped electrode is bonded by solder to be improved.

Find Patent Forward Citations

Hoshi, Yasuyuki. (2018). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 9997603). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9997603

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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