The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jun. 15, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/763 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/763 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02494 (2013.01); H01L 21/02532 (2013.01);
Abstract
A semiconductor structure includes a substrate, at least one first epitaxial layer, and at least one second epitaxial layer. The substrate has a plurality of recesses multidimensionally arranged therein. The first epitaxial layer is disposed at least in the recesses of the substrate. The second epitaxial layer is disposed on the first epitaxial layer.