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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9997392 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

Feb. 23, 2017

Wafer processing method

Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Tomoki Yoshino, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:

Greer Burns & Crain, Ltd.

Primary Examiner:

Caridad Everhart

Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/268 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); B23K 26/364 (2014.01); B23K 26/402 (2014.01); B23K 26/53 (2014.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); B23K 26/364 (2015.10); B23K 26/402 (2013.01); B23K 26/53 (2015.10); H01L 21/268 (2013.01); H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68386 (2013.01); H01L 2223/5446 (2013.01);
Abstract

In a wafer processing method, the back side of a wafer is attached to an adhesive tape supported at its peripheral portion by an annular frame having an inside opening. The wafer is set in the inside opening, thereby supporting the wafer through the adhesive tape to the annular frame. The wafer is held on a chuck table with the front side of the wafer facing the upper surface of the chuck table. A laser beam is applied through the adhesive tape and the back side of the wafer in an area corresponding to each division line, thereby forming a plurality of shield tunnels arranged along each division line. Each shield tunnel extends from the front side of the wafer to the back side thereof, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole.

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