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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9996007 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

Jul. 12, 2016

Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition

Applicants:

SK Innovation Co., Ltd., Seoul, KR;

SK Global Chemical Co., Ltd., Seoul, KR;

Inventors:

Min Ho Jung, Daejeon, KR;

Yu Na Shim, Daejeon, KR;

Kyun Phyo Lee, Daejeon, KR;

Jin Su Ham, Daejeon, KR;

Soo Young Hwang, Daejeon, KR;

Assignees:

SK Innovation Co., Ltd., Seoul, KR;

SK Global Chemical Co., Ltd., Seoul, KR;

Attorney:

The Webb Law Firm

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/09 (2006.01); C09D 165/00 (2006.01); C08G 61/12 (2006.01); G03F 7/11 (2006.01); G03F 7/38 (2006.01); C09D 149/00 (2006.01); C08G 10/00 (2006.01); C08G 65/40 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); C08G 10/00 (2013.01); C08G 65/4012 (2013.01); C09D 149/00 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); H01L 21/0271 (2013.01); H01L 21/0332 (2013.01); H01L 21/31138 (2013.01);
Abstract

Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

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