The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Jun. 20, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jaeyeol Song, Seoul, KR;

Wandon Kim, Yongin-si, KR;

Hoonjoo Na, Hwaseong-si, KR;

Suyoung Bae, Daegu, KR;

Hyeok-Jun Son, Seoul, KR;

Sangjin Hyun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 27/085 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 27/085 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/4966 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.


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