The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Oct. 22, 2014
Applicants:

Choonshik Leem, Seoul, KR;

Jihye Lee, Suwon-si, KR;

Deokyong Kim, Gunpo-si, KR;

Soobok Chin, Seoul, KR;

Inventors:

Choonshik Leem, Seoul, KR;

Jihye Lee, Suwon-si, KR;

Deokyong Kim, Gunpo-si, KR;

Soobok Chin, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/47 (2006.01); H01J 37/28 (2006.01); H01L 21/66 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G01N 21/95684 (2013.01); H01J 37/28 (2013.01); G01B 2210/56 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24592 (2013.01);
Abstract

The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.


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