The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
May. 02, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Mei-Chun Chen, Zhudong Township, TW;
Ching-Chen Hao, Zhubei, TW;
Wen-Hsin Chan, Zhubei, TW;
Chao-Jui Wang, Zhudong Township, TW;
TAIWAN SEMICONDUCTOR MANUFATURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a first doped region and a second doped region and a gate stack on the semiconductor substrate. The semiconductor device also includes a main spacer layer on a sidewall of the gate stack and a protection layer between the main spacer layer and the semiconductor substrate. The protection layer is doped with a quadrivalent element. The semiconductor device further includes an insulating layer formed over the semiconductor substrate and the gate stack and a contact formed in the insulating layer. The contact includes a first portion contacting the first doped region, and the contact includes a second portion contacting the second doped region. The first portion extends deeper into the semiconductor substrate than the second portion.