The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 22, 2016
Applicant:
Canon Anelva Corporation, Kawasaki-shi, JP;
Inventors:
Masami Shibagaki, Kawasaki, JP;
Yasuko Shinoda, Kawasaki, JP;
Assignee:
CANON ANELVA CORPORATION, Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 21/67 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0475 (2013.01); H01L 21/049 (2013.01); H01L 21/3247 (2013.01); H01L 21/67109 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 21/046 (2013.01);
Abstract
A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein in a treatment chamber where gas is sealed at a pressure exceeding a pressure in a molecular flow region.