The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Sep. 02, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Sang-Hee Lee, Seongnam-si, KR;

Hyun-Seok Uhm, Hwaseong-si, KR;

Il-Yong Jang, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/68 (2006.01); G03F 7/20 (2006.01); G03F 1/22 (2012.01); G03F 1/20 (2012.01);
U.S. Cl.
CPC ...
G03F 7/70283 (2013.01); G03F 1/20 (2013.01); G03F 1/22 (2013.01);
Abstract

A pattern generating method includes, generating a first bit map from inputted pattern data. Characteristics of a plurality of beams for exposing a pattern on a substrate are analyzed, each of the plurality of beams being designated to correspond to one of a plurality of grids in the first bit map. The pattern data is corrected such that at least one of the plurality of beams is designated to expose at least a portion of the pattern on the substrate. A second bit map is generated from the corrected pattern data. The substrate is patterned using the plurality of beams according to the designation of the second bit map.


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