The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Sep. 09, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Il-yong Jang, Yongin-si, KR;

Hyung-ho Ko, Hwaseong-si, KR;

Jin-sang Yoon, Anyang-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/22 (2006.01); G03F 1/32 (2012.01); G03F 1/42 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/22 (2013.01); G03F 1/32 (2013.01); G03F 1/42 (2013.01); G03F 7/203 (2013.01);
Abstract

A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.


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