The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Mar. 11, 2015
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Masanori Takazawa, Nishigo-mura, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×10atoms/cm(ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.