The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Nov. 28, 2016
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Dyson H. Tai, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Vincent Venezia, Los Gatos, CA (US);

Gang Chen, San Jose, CA (US);

Chih-Wei Hsiung, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01);
Abstract

An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.


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