The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Sep. 29, 2014
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;

Inventors:

Taro Hasegawa, Yokohama, JP;

Toshiyuki Taguchi, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 31/02 (2006.01); H01L 23/14 (2006.01); H01L 21/00 (2006.01); H01S 5/026 (2006.01); H01S 5/06 (2006.01); H01S 5/0625 (2006.01); H01S 5/343 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0261 (2013.01); H01L 21/00 (2013.01); H01S 5/0612 (2013.01); H01S 5/06256 (2013.01); H01S 5/06258 (2013.01); H01S 5/0265 (2013.01); H01S 5/1212 (2013.01); H01S 5/3434 (2013.01);
Abstract

An optical semiconductor device comprises: a first insulating film provided on a semiconductor layer; a heater provided on the first insulating film; a second insulating film provided on the heater; and an electrode provided on the heater. The electrode extends on the second insulating film; the electrode is in contact with the heater; the second insulating film includes a first region on which the electrode is located; and a thickness of the first region of the second insulating film is greater than that of the first insulating film.


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