The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Nov. 15, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Jonathan Tehan Chen, Hsin-Chu, TW;
Chung-Cheng Chou, Hsin-Chu, TW;
Po-Hao Lee, Hsin-Chu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1273 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1675 (2013.01);
Abstract
The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle of about 30 degrees to 150 degrees. Multiple RRAM structures may be formed by etching through a RRAM stack.