The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Dec. 01, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jeong-heon Park, Hwaseong-si, KR;
Se-chung Oh, Yongin-si, KR;
Byoung-jae Bae, Hwaseong-si, KR;
Jong-chul Park, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.