The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jun. 11, 2015
Applicant:
Ulvac, Inc., Chigasaki-shi, JP;
Inventors:
Hiroki Kobayashi, Chigasaki, JP;
Mitsunori Henmi, Chigasaki, JP;
Mitsutaka Hirose, Chigasaki, JP;
Kazuya Tsukagoshi, Chigasaki, JP;
Isao Kimura, Chigasaki, JP;
Koukou Suu, Chigasaki, JP;
Assignee:
ULVAC, INC., Chigasaki-Shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); H01L 41/187 (2006.01); C01G 25/02 (2006.01); C01G 53/04 (2006.01); C23C 14/14 (2006.01); C23C 14/08 (2006.01); H01L 41/047 (2006.01); H01L 41/319 (2013.01); H01L 41/316 (2013.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); C01G 25/02 (2013.01); C01G 53/04 (2013.01); C23C 14/08 (2013.01); C23C 14/14 (2013.01); H01L 41/0477 (2013.01); H01L 41/316 (2013.01); H01L 41/319 (2013.01);
Abstract
A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.