The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Apr. 21, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Qingqing Liang, San Diego, CA (US);

Francesco Carobolante, San Diego, CA (US);

Fabio Alessio Marino, San Marcos, CA (US);

Narasimhulu Kanike, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 29/10 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 29/107 (2013.01); H01L 29/1025 (2013.01); H01L 29/66174 (2013.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01);
Abstract

Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes a first non-insulative region disposed above an insulative layer, an insulative region, and a second non-insulative region disposed adjacent to the insulative region, wherein the insulative layer is disposed above the second non-insulative region and the insulative region. In some cases, at least a portion of the insulative region is disposed above one or more portions of the second non-insulative region.


Find Patent Forward Citations

Loading…